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Farzaneh Shayeganfar

Amirkabir University of Technology, Iran

Title: Coupled exciton- surface plasmon polariton enhanced photoresponse of 2D hydrogenated SiB

Biography

Biography: Farzaneh Shayeganfar

Abstract

Exciton (strong electron-hole interactions) and Hot Carriers (HC) created by surface Plasmon polaritons enhance the photo response of nano-electronic and optoelectronic devices. In the current research, we developed a quantum framework to study coupled exciton-HCs effects on the photovoltaic energy distribution, scattering process, polarizability and light emission of 2D-semicnductors. We show that the strain and thermal effect on the Two-Dimensional (2D) semiconductors can lead to valley polarized plasmon Quasi Particles (QP) and HC generation. Our results reveal that the electron-phonon (e-ph) and electron-electron (e-e) interactions characterize the correlation between the decay rates, scattering of excitons and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra indicate that light emission can be enhanced by increasing strain and temperature. Here, we introduce a promising stable 2D H-SiB semiconductor with engineering the elastic strain, creating a broad range of absorption spectrum (solar light capture), which concentrates plasmon resonances and polarized plasmon QP, constituting strong coupling of electronic and photonics states, which makes it as a promising candidate for light harvesting, plasmonic photocurrent devices
and quantum information.