Day 2 :
Keynote Forum
Eui-Hyeok Yang
Stevens Institute of Technology, USA
Keynote: Controlled growth of graphene, carbon nanotubes and transition metal dichalcogenides
Time : 10:00 – 10:30
Biography:
Eui-Hyeok Yang is a Professor of the Mechanical Engineering Department at Stevens Institute of Technology. He was a Senior Member of the Engineering Staff at NASA's Jet Propulsion Laboratory. He received a number of awards, including the prestigious Lew Allen Award for Excellence at JPL in 2003 in recognition of his excellence in advancing the use of MEMS-based actuators for NASA's space applications. He is an Associate Editor and/or Editorial Board of several journals including the IEEE Sensors Journal. As Principal Investigator, he has been responsible for obtaining extremely competitive research funding from several federal agencies including NSF, AFOSR, US Army, NRO, NASA and DARPA (including 6 NSF and 3 AFOSR grants, and 5 NASA and 3 NRO contracts) with the total amount exceeding $7M.
Abstract:
My groups research is aimed at understanding some of the basic principles of smart microfluidics and 1D/2D material growth, solving problems in the implementation of these materials. I will present two different topics. First topic is our development of the low pressure chemical vapor deposition (LPCVD) growth of 1D and 2D materials. We grow large-grain single crystalline or large-scale polycrystalline monolayers of MoS2, MoSe2, WSe2 and WS2 along with other transition metal dichalcogenides (TMDs). Our unique growth method permits the growth of TMDs on the contacted areas only, enabling the chip-scale fabrication of heterostructures in arbitrary shapes without lithography. We also demonstrate an approach toward controlled CNT growth atop graphene substrates, where the reaction equilibrium between the source hydrocarbon decomposition and carbon saturation into/precipitation from the catalyst nanoparticles shifts toward CNT growth, rather than graphene consumption. Second, we demonstrate a novel in situ control of the droplet pinning on the polymer surface, enabling the control of droplet adhesion from strongly pinned to extremely slippery (and vice versa). The adhesion of organic droplets on the surfaces dramatically switches in situ (i.e., without the removal of liquid droplets), presenting a great potential for in situ manipulation and control of liquid droplets for various applications including lab-on-chip technologies, oil separation, and water treatment.
Keynote Forum
Mohammad A Qasaimeh
New York University Abu Dhabi, UAE
Keynote: Microfludics for cell analysis and isolation
Time : 10:30- 11:00
Biography:
Mohammad A Qasaimeh is an Assistant Professor of Engineering at New York University Abu Dhabi (NYUAD). He directs the Advanced Microfluidics and Microdevices Laboratory (AMMLab), and his current research interests include developing microfluidic devices for biomedical applications. Prior to joining NYUAD, he was a Postdoctoral Associate at Massachusetts Institute of Technology and Harvard Medical School. He earned his PhD degree in Biomedical Engineering from McGill University, where he received several prestigious fellowships and awards including the NSERC Postdoctoral Fellowship. His research has been published in several peer-reviewed journals including Nature Communications, PLOS Biology, and Lab on a Chip.
Abstract:
Microfluidics has emerged as a technology with significant impact on cell biology and medical research. The ability to manipulate fluids at the microscale has led to new methods to manipulate and study biological entities. During this talk, I will present microfluidic technologies for three different biological applications: (i) I will discuss our work on developing a simple microfluidic system for culturing mammalian cells and temporally-controlling the delivery of bio-reagents. We used the system to spatiotemporally control the distribution of Tumor Necrosis Factor (TNF) within the cell-culture channel, and HeLa cells were exposed to TNF pulses as short as 8 s. With this system, we measured for the first time the shortest required duration of TNF stimulation that elicits activation of the survival pathway (NF-kB) in cancer cells. Preliminary results suggested that short pulses of TNF stimulation can provoke early cancer cell apoptosis. Next, (ii) I will introduce our work with Microfluidic Quadrupoles (MQs), which constitutes the first experimental demonstration and characterization of fluidic quadrupoles. We used the MQ to manipulate concentration gradients of chemicals and established the concept of floating gradients. We used the MQ to apply floating gradients of Interleukin-8 to cultured human neutrophils in a Petri dish, and challenged neutrophils with stationary and moving gradients. The setup allowed us to observe dynamics of neutrophils during adhesion, polarization, and migration. Finally, (iii) I will discuss our recent experiments in using the herringbone microfluidic chip to capture circulating plasma cells from blood samples taken from multiple myeloma patients.
Keynote Forum
Basma El Zein
Basma El Zein University of Business and Technology, Saudi Arabia
Keynote: ZnO nanostructures for quantum dots sensitized solar cells
Time : 11:20- 11:50
Biography:
Basma El Zein, is the Director of Research and Consultation Center (RCC) at the University of Business and Technology (UBT), Jeddah, Saudi Arabia. She was a Research Scientist at KAUST and an Associate Researcher at IEMN, Lille, France. She got her PhD from the University of Lille 1–France in Nano-Optoelectronics (Engineering) with high distinction. She is a senior member of IEEE, member of ACS, MRS, SPIE, ECS and Lebanese Engineering syndicate. She has been selected as Solar Pioneer by MESIA during WFES 2015. Her recent research interests include working on nanostructures for third generation solar cells, energy harvesting and energy storage. She is exploring new materials such as kesterite, perovskite and protein to be used as light absorber for solid state solar cells. rn
Abstract:
Nano-materials are considered as building blocks of many optoelectronic devices. They differ from bulk counterpart in the size, characteristic and their new physical properties and offer new opportunities to be employed in various applications. Zero dimensional (0D) and one Dimensional (1D) nanostructures have attracted lots of attention in solar energy harvesting, conversion and storage, owing to their unique physical and chemical properties. Zinc oxide (ZnO) nanowires provide separation and transportation of the generated carriers by the excitation of the attached Quantum Dots (QDs). The geometry of the NWs arrays allows improved optical reflection and light trapping leading to enhancing the light absorption. Furthermore, ZnO NWs will drive and direct the transportation of the photo-generated electrons, and thus improving the energy conversion efficiency of the solar cell. In this presentation, we will discuss one dimensional nanostructure in quantum dots sensitized solar cells and the role they play in increasing the conversion efficiency of solar cells, taking in consideration the materials to be used to meet the main objective of developing an eco-green solar cell with high conversion efficiency.
Keynote Forum
Edward Yi Chang
National Chiao Tung University, Taiwan
Keynote: InAs HEMTs for high frequency and high speed applications
Time : 11:50-12:20
Biography:
Edward Yi Chang has completed his PhD from University of Minnesota, USA. He is the VP of Research and Development and Dean of International College of Semiconductor Technology, NCTU, Taiwan. He has published more than 100 papers in reputed journals and is an IEEE Fellow and Distinguished Lecturer.
Abstract:
Outstanding carrier transport properties of III-V compound semiconductors have shown excellent potential for high frequency characteristics. Among them, III-V HEMTs on various material systems like InGaAs/InAlAs, InAs/InP have emerged promising for millimeter wave and terahertz applications. Many previous reports of record high frequency characteristics have shown InGaAs/InAlAs HEMTs with very high cut off frequency (ft) and maximum oscillation frequency (fmax). With increase in Indium concentration higher electron mobility can be achieved which can lead to higher operating frequency. Among them, InAs HEMTs have shown high frequency record of 710 GHz for 60 nm gate length. These HEMT structures can be fabricated for high frequency applications using Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) techniques. Small gate length devices have shown excellent RF performances over past two decades. Besides, due to high electron mobility, saturation velocity and large conduction band offset in InAs, InAs-channel HEMTs are also promising for high speed and low power applications. InAs pseudomorphic HEMTs on InP substrate have been reported to have less short channel effects (SCE) through cap recess engineering and demonstrated low gate delay time when biased at 0.5V. In conclusion, InAs devices are promising for high frequency applications upto sub terahertz range and high speed low power logic application for post Si CMOS application. The outstanding performances of the device will be presented in this talk.
Keynote Forum
Edward Yi Chang
National Chiao Tung University, Taiwan
Keynote: InAs HEMTs for high frequency and high speed applications
Time : 11:50-12:20
Biography:
Edward Yi Chang has completed his PhD from University of Minnesota, USA. He is the VP of Research and Development and Dean of International College of Semiconductor Technology, NCTU, Taiwan. He has published more than 100 papers in reputed journals and is an IEEE Fellow and Distinguished Lecturer.
Abstract:
Outstanding carrier transport properties of IIIt-V compound semiconductors have shown excellent potential for high frequency characteristics. Among them, III-V HEMTs on various material systems like InGaAs/InAlAs, InAs/InP have emerged promising for millimeter wave and terahertz applications. Many previous reports of record high frequency characteristics have shown InGaAs/InAlAs HEMTs with very high cut off frequency (ft) and maximum oscillation frequency (fmax). With increase in Indium concentration higher electron mobility can be achieved which can lead to higher operating frequency. Among them, InAs HEMTs have shown high frequency record of 710 GHz for 60 nm gate length. These HEMT structures can be fabricated for high frequency applications using Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) techniques. Small gate length devices have shown excellent RF performances over past two decades. Besides, due to high electron mobility, saturation velocity and large conduction band offset in InAs, InAs-channel HEMTs are also promising for high speed and low power applications. InAs pseudomorphic HEMTs on InP substrate have been reported to have less short channel effects (SCE) through cap recess engineering and demonstrated low gate delay time when biased at 0.5V. In conclusion, InAs devices are promising for high frequency applications upto sub terahertz range and high speed low power logic application for post Si CMOS application. The outstanding performances of the device will be presented in this talk.
Keynote Forum
Eui-Hyeok Yang
Stevens Institute of Technology, USA
Keynote: Engineered nanomaterial surfaces – Fundamentals and applications
Time : 09:00 - 09:30
Biography:
Eui-Hyeok Yang is a Professor of the Mechanical Engineering Department at Stevens Institute of Technology. He was a Senior Member of the Engineering Staff at NASA\'s Jet Propulsion Laboratory. He received a number of awards, including the prestigious Lew Allen Award for Excellence at JPL in 2003 in recognition of his excellence in advancing the use of MEMS-based actuators for NASA\'s space applications. He is an Associate Editor and/or Editorial Board of several journals including the IEEE Sensors Journal. As Principal Investigator, he has been responsible for obtaining extremely competitive research funding from several federal agencies including NSF, AFOSR, US Army, NRO, NASA and DARPA (including 6 NSF and 3 AFOSR grants, and 5 NASA and 3 NRO contracts) with the total amount exceeding $7M.
Abstract:
My groups research is aimed at understanding some of the basic principles of smart microfluidics and 1D/2D material growth, solving problems in the implementation of these materials. I will present two different topics. First topic is our development of the low pressure chemical vapor deposition (LPCVD) growth of 1D and 2D materials. We grow large-grain single crystalline or large-scale polycrystalline monolayers of MoS2, MoSe2, WSe2 and WS2 along with other transition metal dichalcogenides (TMDs). Our unique growth method permits the growth of TMDs on the contacted areas only, enabling the chip-scale fabrication of heterostructures in arbitrary shapes without lithography. We also demonstrate an approach toward controlled CNT growth atop graphene substrates, where the reaction equilibrium between the source hydrocarbon decomposition and carbon saturation into/precipitation from the catalyst nanoparticles shifts toward CNT growth, rather than graphene consumption. Second, we demonstrate a novel in situ control of the droplet pinning on the polymer surface, enabling the control of droplet adhesion from strongly pinned to extremely slippery (and vice versa). The adhesion of organic droplets on the surfaces dramatically switches in situ (i.e., without the removal of liquid droplets), presenting a great potential for in situ manipulation and control of liquid droplets for various applications including lab-on-chip technologies, oil separation, and water treatment.